Scientists at the Massachusetts Institute of Technology have developed the smallest indium gallium arsenide transistor ever. The compound transistor developed by the research team of the school's microsystem technology laboratory is only 22 nanometers long. The research team introduced the research results at the International Electronic Equipment Conference held in San Francisco recently.
Del Alamo, a professor in the Department of Electrical Engineering and Computer Science at the Massachusetts Institute of Technology, said that as silicon transistors are reduced to the nanometer scale, the amount of current generated by the device is continuously reduced, which limits its operating speed, which will lead to the gradual departure of Moore's Law To the end. In order to continue Moore's Law, researchers have been looking for alternatives to silicon to generate larger currents on a smaller scale. One of them is indium gallium arsenide, which has been used in optical fiber communication and radar technology to have excellent electrical properties.
Research by the Alamo team has shown that it is possible to create a nanometer-sized metal oxide semiconductor field effect transistor (MOSFET) using indium gallium arsenide, which is the most commonly used type in logic applications such as microprocessors. The transistor includes 3 electrodes: gate, source and drain, and the gate controls the current between the other two electrodes. Due to the tight space of these tiny transistors, the three electrodes must be placed very close to each other, but even with precision tools, it is difficult to achieve a precise level. The Alamo team achieved "self-alignment" of the transistor gate between the other two electrodes.
The researchers first used molecular beam epitaxy to grow a thin layer of indium gallium arsenide material, and then deposited a layer of metal molybdenum on the source and drain. The researchers used an electron focused beam to "draw" an extremely fine pattern on the substrate, then etched away unwanted areas of the material, and the gate oxide was deposited on the tiny gaps. Finally, the grid formed by spraying molybdenum vapor on the surface can be pressed tightly between the other two electrodes.
Alamo said that through the combination of etching and deposition, the gate can be placed between the electrodes with a small gap around it. Their next goal will be to further improve the electrical performance of the transistor and increase its operating speed by eliminating excess resistance in the device. Once this goal is achieved, they will further reduce the size of the device and eventually reduce the gate length of the transistor to less than 10 nanometers.
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